Founded as a silicon valley power semiconductor company, ixys pioneered the high voltage power mosfet and igbt technologies and today is one of the few semiconductor companies that offer the full product portfolio for power. This application note describes the ix6611 device which is an intelligent high speed gate driver designed to drive ixys igbts and power mosfet devices. A mosfet driver is a type of power amplifier that accepts a low power input from a controller ic and produces a high current drive input for the gate of a high power transistor such as an insulatedgate bipolar transistor igbt or power mosfet. In order to ensure parts arent damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an. Feb 23, 2017 press release ixys announces high voltage, dualchannel, isolated gate driver product, providing 4 kv isolation for power igbt and mosfet modules. For this reason, some protection circuitry is needed to turn off the mosfet module.
An internal negative charge regulator provides a selectable negative gate drive. The dual cmos, highspeed, highcurrent ixrfdsm607x2 gate driver. Ixys, a leader in power semiconductors, mixedsignal and digital ics for power conversion and motion control applications, announced today the introduction of the ixrfd630 and ixrfd631 high power rf drivers by its ixys. Ixys corporation is a global supplier of power management semiconductors with a comprehensive range of power mosfet, igbt, bipolar, and mixedsignal ic solutions that provide improved efficiency and reduced energy costs in a wide range of power system applications. The ixfk48n50 is a single nchannel enhancementmode power mosfet with fast intrinsic diode hiperfet. Ixys introduces the ixrfdsm607x2 15a rf mosfet driver for. Ixys gate drivers are available at mouser electronics. Ixrfdsm607x2 15a lowside rf mosfet gate driver ixys. With a range spanning from single to halfbridge and multiplechannel drivers rated for either low or high voltage up to 1500 v applications, st also offers galvanicallyisolated gate driver ics for safety and functional requirements, systeminpackage sip solutions integrating high and lowside gate drivers and mosfet based power. Range of power inductors utilizing thin film photolithography technology metal alloy composite with low loss and high current capability for power supply circuits.
This is the circuit used in the evic420 evaluation board,and is capable of driving a mosfet. Ixys power semiconductors and integrated circuits littelfuse. They are configured with independent high side and lowside referenced output channels, both of which can source and sink up to 2a. Ixys corporation, and its wholly owned subsidiary, clare, inc. The ixdd414 can source and sink 14a of peak current while producing voltage rise and fall times of less than 30ns. You are using an unlicensed and unsupported version of dotnetnuke professional edition. Ixys integrated circuits, a littelfuse technology, has designed a driver to work specifically with sic mosfets and high power igbts. In order to ensure parts arent damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in. Ixys ixrfdsm607x2 15a lowside rf mosfet gate driver is designed to drive mosfets in class d and class e highfrequency rf applications. Sep 26, 2017 ixys announces 30a, 4kv isolated dual channel, gate driver for power mosfet and igbt modules email print friendly share september 26, 2017 08. Each of the two outputs is capable of sourcing and sinking 5a of peak current and offers up to 20v maximum voltage rating.
Highvoltage levelshift circuitry enables this device to operate up to 600v. It is possible then to use these high current drivers for very high frequency switching application, driving high current. Ixys colorado introduces the ixrfd615x2 dual 15 a high. High power density easy to mount space savings applications smps, pfc, solar inverters, server and telecom power systems, arc welding, induction heating, motor controls ixys latest generation of double metal power mosfets. Buy ixys semiconductor ixfh26n60q online at newark. Ixys integrated circuits divisions proprietary commonmode design techniques provide stable operation in high.
The ixdd609si ixdi609si ixdn609si highspeed gate drivers are especially well suited for driving the latest ixys mosfets and igbts. Simple fault protection logic circuit figure 6 shows the addition of two ixdd414s. Manufactured on ixys integrated circuits divisions proprietary highvoltage bcdmos on soi silicon on insulator process, the ix21 is extremely robust, and is virtually immune to negative transients. It is suitable for dctodc converters, synchronous rectification, battery chargers, dc choppers, switchmode and resonantmode power supplies. Headquartered in milpitas, ca, and leiden, netherlands, ixys has gained a worldwide reputation as a premier power semiconductor manufacturer. The floating highside channel can drive an nchannel power mosfet or igbt 600v from the common reference. The ix4351ne offers an internal negative charge regulator that provides a selectable negative gate drive bias for improved dvdt immunity and faster turnoff.
Ixys power mosfets are used in large power conversion systems and. This is the circuit used in the evdd415 evaluation board,and is capable of driving a mosfet at up to the maximum operating limits of the ixdd415. A new generation of 600v gaas schottky diodes for high power density pfc applications an ixys paper. The ixdd414 is a high speed high current gate driver specifically designed to drive the largest mosfets and igbts to their minimum switching time and maximum practical frequency limits. Feb 23, 2016 the ix2120b complements ixys icds extensive portfolio of high voltage gate drivers, low side gate drivers, optically isolated gate drivers and the full range of ixys power semiconductors. Ixys lowside gate drivers are ultrafast, high current mosfet and igbt gate drivers that are optimized for high efficiency performance in motor drive and. High current power mosfet with current mirror and temperature sense diodes using current mirror for current sensing in high current mosfet applications significantly reduces power loss in current sensing circuit and lowers design cost by replacing expensive high power current sensors with inexpensive standard resistors. Manufactured on ixys integrated circuits divisions proprietary highvoltage bcdmos on. We invite you to view the full range of littelfuse power semiconductor products. An internal negative charge regulator provides a selectable negative gate drive bias for improved dvdt immunity and faster turnoff. The ixdd514 and ixde514 are high speed high current gate drivers specifically designed to drive the largest ixys.
Siliconcarbide sic mosfets that become a visible part of the mosfet market require special gate drivers that are able to provide a negative voltage to the gate in a mosfets off state, high. The ix2120 is extremely robust and virtually immune to negative transients. High current power mosfet with current mirror and temperature sense. Select datasheets for ixys rf products are available here. Separate 9a source and sink outputs allow for tailored turnon and turnoff timing while minimizing switching losses. Mosfet drivers are beneficial to mosfet operation because the high current drive provided to the mosfet. Ixys announces new 1200v halfbridge gate driver marketwatch. When you use our website, we collect personal data about you and your use of the website, through cookies and analytics tools. Ixfk48n50 ixys semiconductor power mosfet, n channel, 500 v. Ix2120 1200v high and low side gate driver ixys integrated. The ix2127 is a high voltage, high speed power mosfet and igbt driver ic. Ixys ix4340 mosfet drivers are a dual, high current, and low side gate driver with two outputs.
Ixys introduces the ixrfd615 ultrafast rf mosfet driver. This device has a maximum propagation delay time of 40 ns. Ixys introduces 600v, high side gate driver ic for power mosfets and igbts the ix2127 gate driver hvic is produced in clares soi process march 09, 2010 08. For this reason, some protection circuitry is needed to turn off the mosfet. Dual 5 a gate driver ic for power mosfets and igbts. Ixys offers products and technologies that span the entire power spectrum, addressing more than 90 percent of the overall power market ranging from high power semis and refined power mcus to inverter components for windsolar energy. Highspeed gate driver motor drive inverter description the ix2127 is a highvoltage, highspeed power mosfet and igbt driver. Gd rectifiers has been the uks official distributor for ixys corporation, ixys colorado and ixys uk westcode for over 20 years. To order remaining stock and access technical support for ixys rf products, email us or call 978 5246727. Ixys introduces 600v, highside gate driver ic for power.
Dual 15 a high speed rf mosfet driver eeweb community. The ix2120b is a high voltage ic that can drive discrete power mosfets. The ix3120 and ix3180 optically coupled gate drivers are capable of sourcing or sinking 2. Ix2120b drives both high side and low side igbts or mosfets. Ixys power mosfets are designed for high efficiency, high speed power switching applications. Mosfet drivers mosfet gate drivers, igbt, power mosfet. Ixys prf1150 rf generator module ixys prf1150 rf generator module is designed for evaluation purposes, providing a reference for utilizing ixysrf mosfets and mosfet gate drivers in a class e generator application, producing 1kw of rf power.
Available in compact housing packages, these power mosfets give design engineers the capability to control more power within a smaller footprint. As far as driving igbt is concerned, it resembles a mos. The ixrfdsm607x2 driver is an important addition to ixys colorados growing family of components for high speed power system design addressing not only performance needs but also providing high. Its diversified product base of specialized power semiconductors, integrated circuits and rf power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation. Ixys, a leader in power semiconductors, mixedsignal and digital ics for power conversion and motion control applications, announced today the introduction of the ixrfd615 ultrafast lowside rf mosfet gate driver by its ixys colorado division. Ixys website product portfolio power devices ixys corporation. Separate 9 a source and sink outputs allow for tailored turnon and.
Ixys offers their ix4426, ix4427, and ix4428 dual lowside ultrafast mosfet drivers ixys features their ix4426, ix4427, and ix4428 dual high speed, lowside gate drivers. We may also collect personal data such as your name, job title, company name, address, email address and telephone number either directly from you or by combining information we collect through other sources. High speed gate driver motor drive inverter description the ix2127 is a high voltage, high speed power mosfet and igbt driver. High voltage levelshift circuitry enables this device to operate up to 600v. Mosfet drivers are beneficial to mosfet operation because the high current drive provided to the. Ixan0040 gaas schottky diodes allow higher power density. May 31, 2016 technical article high current power mosfet with current mirror and temperature sense diodes may 31, 2016 by anatoliy tsyrganovich this article discusses the advantages of ixys mmixt2n50p3 with current mirror to monitor the drain current and its various applications. It also contains the circuit blocks necessary for pulse transformer isolated applications to galvanically isolate a signal sourcerecipient such as a microcontroller unit mcu from high power. Ixys corporation ixys, a global manufacturer of power semiconductors and ics for energy efficiency, power management, transportation, medical, and motor control applications, features a 10 a 4000 v, dual channel, isolated gate driver. Ixys announces highvoltage, dualchannel, isolated gate. High current power mosfet with current mirror and temperature.
The floating high side channel can drive an nchannel power mosfet or igbt 1200v from the common reference. Its diversified product base of specialized power semiconductors, integrated circuits and rf power. Heritage littelfuse power semiconductor products and acquired ixys power semiconductor products and packages are now ixys. Ixys 4500v high voltage power mosfets are the highest voltage power mosfet product line in the industry in international standard size packages. Ixys, announced the immediate availability of the ix2120b 1200v half bridge gate driver ic. They are specifically designed to address demanding, fastswitching power conversion applications requiring very high blocking voltages up to 4.
Internally connected to all circuitry, these leads provide ground reference for the entire chip. Ixys corporation is a global supplier of power management semiconductors with a comprehensive range of power mosfet, igbt, bipolar, and mixedsignal ic solutions that provide improved efficiency and reduced energy costs in a wide range of power. Think of ixys corporations ixdd609sia power driver the next time you are in need of a tool that can power your gates on and off. The lowcost ix4340ue is well suited for driving power mosfets and igbts in high power smps applications, power. The ixrfdsm607x2 driver is an important addition to ixys colorados growing family of components for high speed power system design addressing not only performance needs but also. The ixfh26n60q is a qclass hiperfet nchannel enhancementmode power mosfet features avalanche rated and. Dual 15 a high speed rf mosfet driver ixys its diversified product base of specialized power semiconductors, integrated circuits and rf power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. The ix4351ne is designed specifically to drive sic mosfets and high power igbts. Ixys lowside gate drivers are ultrafast, high current mosfet and igbt gate drivers that are optimized for high efficiency performance in motor drive and power conversion applications. Driving sic mosfets with a highspeed gate driver ic. We invite you to view the full range of littelfuse power. Ixys launches 300v ultrajunction x3class power mosfets featuring benchmark onresistance and gate charge figure of merit ixys corporation. A short circuit in a highpower mosfet module such as the vm058002f, 580a, 200v, as shown in figure 26, can cause the current through the module to flow in excess of 1500a for 10s or more prior to selfdestruction due to thermal runaway.
High frequency gate drive circuit the circuit diagram in figure 17 is a circuit diagram for a very high switching speed, high frequency gate driver circuit using the deic420. For application purposes, this lead is connected, directly to the gate of a mosfet gnd power ground the system ground leads. This device has a maximum propagation delay time of 30 ns. It features low static draintosource onresistance hdmos process and high power density. Ideal for high voltage transistors this ixdf604si power driver manufactured by ixys corporation will help switch junction. Ixfh26n60q ixys semiconductor power mosfet, n channel, 600 v. Ixys integrated circuits divisions proprietary commonmode design techniques provide stable operation in high dvdt noise.
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